1 ELM34419AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-case rjc 25 c /w maximum junction-to-ambient rja 40 c /w parameter symbol limit unit note drain-source voltage vds -30 v gate-source voltage vgs 25 v continuous drain current ta=25c id -10 a ta=70c -8 pulsed drain current idm -55 a 3 avalanche current iar -29 a avalanche energy l=0.1mh eas 43 mj power dissipation ta=25c pd 3 w ta=70c 2 junction and storage temperature range tj, tstg -55 to 150 c ELM34419AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-30v ? id=-10a ? rds(on) < 20m (vgs=-10v) ? rds(on) < 35m (vgs=-4.5v) 4 - pin configuration circuit sop-8(top view) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 single p-channel mosfet s g d
2 ELM34419AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v -1 a vds=-20v, vgs= 0v, tj=125 c -10 gate-body leakage current igss vds=0v, vgs= 25v 100 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -1.0 -1.5 -3.0 v static drain-source on-resistance rds(on) vgs=-10v, id=- 10a 15 20 m 1 vgs =- 4.5v, id =-7 a 25 35 m forward transconductance gfs vds =-1 0v, id =-10 a 24 s 1 diode forward voltage vsd is =-1a , vgs=0v -1.2 v 1 max. body -diode continuous current is -2.5 a dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 1490 pf output capacitance coss 301 pf reverse transfer capacitance crss 190 pf gate resistance rg vgs=15mv, vds=0v, f=1mhz 7.8 9.0 switching parameters total gate charge qg vgs=-10v, vds=-15v id=-10a 26 nc 2 gate-source charge qgs 4 nc 2 gate-drain charge qgd 5 nc 2 turn - on delay time td(on) vgs=-10v, vds=-15v id-1a, rgen=6 5.7 ns 2 turn - on rise time tr 10.0 ns 2 turn - off delay time td(off) 18.0 ns 2 turn - off fall time tf 5.0 ns 2 ta=25 c single p-channel mosfet 4 - note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%.
3 typical electrical and thermal characteristics p-channel logic level enhancement mode field effect transistor (preliminary) p2003ev8 sop-8 halogen-free & lead-free niko-sem 3 jan-08-2009 rev 0.9 0 0.5 1 1.5 2 2.5 10 20 30 40 50 v gs = 3v 60 v g s = 4.5v v gs = 7v v g s = 10v v gs = 5v 0 10 20 30 50 40 0.005 0.010 0.015 0.020 0.025 0.035 0.040 0.045 0.050 v gs = 4.5v v gs = 10v 0 2 4 6 8 10 0 0.01 0.02 0.03 0.04 0.05 i d = -10a - 50 - 25 0 25 50 75 100 125 150 r ds(on) x 0.6 v gs = 10v r ds(on) x 0.8 r ds(on) x 1.0 r ds(on) x 1.2 r ds(on) x 1.4 r ds(on) x 1.6 r ds(on) x 1.8 i d = -10a 0 20 30 40 50 t j =-20c 5.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t j =25c 10 t j =125c 0 4.5 9 13.5 18 22.5 27 0 2 4 6 8 10 i d = -10a v ds = -15v out p ut characteristics -i d , drain-to-source current(a) - v ds , drain-to-source volta g e ( v ) on-resistance vs drain current r ds(on) on-resistance(ohm) -i d , drain-to-source current on-resistance vs gate-to-source r ds(on) on-resistance(ohm) - v gs , gate-to-source volta g e ( v ) on-resistance vs drain current r ds(on) on-resistance(ohm) t j , junction tem p erature ( ? c ) transfer characteristics -i d , drain-to-source current(a) - v gs , gate-to-source volta g e ( v ) gate charge characteristics -v gs , gate-to-source voltage(v) qg , total gate charge ELM34419AA-N single p-channel mosfet 4 -
4 p-channel logic level enhancement mode field effect transistor (preliminary) p2003ev8 sop-8 halogen-free & lead-free niko-sem t j = 1 5 0 c t j = 2 5 c 0 .0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .0 e + 0 2 1 .0 e + 0 1 1 . 1 . 1 . 1 . 1 . 0 e + 0 0 0 e -0 1 0 e -0 2 0 e -0 3 0 e -0 4 1 .0 e -0 5 1s dc 100m s 10m s 1m s 10s 0.01 0.1 1 10 100 0.1 1 10 100 note : 1.v gs = 10v 2.t a =25 c 3.r . ja =40 c/w 4. single pulse operation in this area is lim ited by r ds(on) . 0 200 400 600 800 1000 1200 1400 0.0001 0.001 0.01 0.1 1 10 single pulse r . ja = 40 c/w ta=25 c 4 jan-08-2009 rev 0.9 body diode forward voltage -i s , source current(a) - v sd , source-to-drain v olta g e ( v ) sin g le pulse maximum power dissi p ation power(w) t 1 , s q uare wave pulse duration [ sec ] r(t) , mormalized effective transient thermal resistance safe o p eratin g area -i d , drain current(a) - v ds , drain-to-source volta g e ( v ) transient thermal res p onse curve sin g le pulse time ( s ) 0 250 500 750 1000 1250 1500 1750 2000 0 5 10 15 20 25 30 capacitance characteristic c , capacitance(pf) - v ds , drain-to-source volta g e ( v ) ELM34419AA-N single p-channel mosfet 4 -
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